2012. 12. 04 1/6 semiconductor technical data KF5N40D/i n channel mos field effect transistor revision no : 0 general description this planar stripe mosfet has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. it is mainly suitable for led convertor and switching mode power supplies. features h v dss(min.) = 400v, i d = 4.2a h drain-source on resistance : r ds(on) =1.6 ? (max) @v gs =10v h qg(typ.) =5.5 nc maximum rating (tc=25 ? ) * : drain current limited by maximum junction temperature. g d s characteristic symbol rating unit drain-source voltage v dss 400 v gate-source voltage v gss ? 30 v drain current @t c =25 ? i d 4.2 a @t c =100 ? 2.8 pulsed (note1) i dp 10* single pulsed avalanche energy (note 2) e as 70 mj repetitive avalanche energy (note 1) e ar 2.7 mj peak diode recovery dv/dt (note 3) dv/dt 4.5 v/ns drain power dissipation t c =25 ? p d 50 w derate above25 ? 0.4 w/ ? maximum junction temperature t j 150 ? storage temperature range t stg -55 q 150 ? thermal characteristics thermal resistance, junction-to-case r thjc 2.5 ? /w thermal resistance, junction-to- ambient r thja 110 ? /w dpak (1) dim millimeters a a b b c c d d f ff h g k g j l k l m 0.96 max 0.90 max e e m n h 0.70 min o 0.1 max n 123 6.60 0.20 + _ 6.10 0.20 + _ 5.34 0.30 + _ 0.70 0.20 + _ 2.70 0.15 + _ 2.30 0.10 + _ 1.80 0.20 + _ 0.50 0.10 + _ 2.30 0.10 + _ 0.50 0.10 + _ j o 1. gate 3. source 2. drain ipak(1) 123 a a b b c c d d e e f ff g g h h j j l l 0.96 max k m p m n p n k 6.6 0.2 + _ 6.1 0.2 + _ 5.34 0.3 + _ 0.7 0.2 + _ 9.3 0.3 + _ 2.3 0.2 + _ 0.76 0.1 + _ 2.3 0.1 + _ 0.5 0.1 + _ 1.8 0.2 + _ 0.5 0.1 + _ 1.0 0.1 + _ + _ 1.02 0.3 dim millimeters 1. gate 3. source 2. drain pin connection KF5N40D kf5n40i
2013. 2. 04 2/6 KF5N40D/i revision no : 0 electrical characteristics (tc=25 ? ) characteristic symbol test condition min. typ. max. unit static drain-source breakdown voltage bv dss i d = 250 a, v gs =0v 400 - - v breakdown voltage temperature coefficient bv dss / t j i d = 250 a, referenced to 25 ? - 0.4 - v/ ? drain cut-off current i dss v ds =400v, v gs =0v, - - 10 a gate threshold voltage v th v ds =v gs , i d =250 a 2.5 - 4.5 v gate leakage current i gss v gs = ? 30v, v ds =0v - - ? 100 na drain-source on resistance r ds(on) v gs =10v, i d =2.1a - 1.3 1.6 ? dynamic total gate charge q g v ds =320v, i d =5a v gs =10v (note4,5) - 5.4 - nc gate-source charge q gs - 1.5 - gate-drain charge q gd - 2.5 - turn-on delay time t d(on) v dd =200v, i d =5a r g =25 ? (note4,5) v gs =10v - 20 - ns turn-on rise time t r - 20 - turn-off delay time t d(off) - 25 - turn-off fall time t f - 15 - input capacitance c iss v ds =25v, v gs =0v, f=1.0mhz - 310 - pf output capacitance c oss - 50 - reverse transfer capacitance c rss - 5 - source-drain diode ratings continuous source current i s v gs 2013. 2. 04 3/6 revision no : 0 2.5a KF5N40D/i
2013. 2. 04 4/6 KF5N40D/i revision no : 0 10 -2 10 1 10 0 10 -1 3 10 1 10 -3 10 -2 10 -1 10 0 10 -4 10 -5 3 4 5 6
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2013. 2. 04 6/6 KF5N40D/i revision no : 0
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